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| Composite Transistors XP5A554 Silicon NPN epitaxial planer transistor Unit: mm 0.425 1.250.1 0.425 0.20.05 For high speed switching 2.10.1 0.65 q q q For high speed switching. Low collector to emitter saturation voltage VCE(sat). Two elements incorporated into one package. 2.00.1 s Features 0.65 1 2 3 6 5 4 0.2 0.90.1 s Basic Part Number of Element q 0 to 0.1 2SC3757 x 2 elements 1 : Base (Tr1) 2 : Emitter (Tr1) 3 : Base (Tr2) 0.70.1 0.20.1 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Emitter to base voltage of element Collector current Collector to emitter voltage Symbol VCBO VCES VEBO IC ICP PT Tj Tstg (Ta=25C) Ratings 40 40 5 100 300 150 150 -55 to +150 Unit V V V mA mA mW C C 4 : Collector (Tr2) 5 : Emitter (Tr2) 6 : Collector (Tr1) EIAJ : SC-88 S-Mini Type Package (6-pin) Marking Symbol: FO Internal Connection 1 2 3 Tr1 6 5 4 Peak collector current Total power dissipation Overall Junction temperature Storage temperature Tr2 s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Turn-off time Storage time (Ta=25C) Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton toff tstg Conditions VCB = 15V, IE = 0 VEB = 4V, IC = 0 VCE = 1V, IC = 10mA IC = 10mA, IB = 1mA IC = 10mA, IB = 1mA VCB = 10V, IE = -10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 450 2 17 17 10 6 90 0.17 min typ max 0.1 0.1 200 0.25 1.0 V V MHz pF ns ns ns Unit A A 0.12 -0.02 +0.05 1 Composite Transistors ton, toff Test Circuit 0.1F Vout 220 Vin=10V 3.3k 3.3k Vbb= -3V 50 XP5A554 tstg Test Circuit 0.1F A 910 0.1F 500 Vin=10V 500 50 Vbb=2V VCC=10V 90 Vout PT -- Ta 200 1k Total power dissipation PT (mW) 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 50 VCC=3V Vin Vout 10% 90% Vin Vout 10% 90% 0 Vin 10% 10% tstg (Wave form at A) Vout toff ton Ambient temperature Ta (C) IC -- VCE 120 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 100 VBE(sat) -- IC IC/IB=10 Base to emitter saturation voltage VBE(sat) (V) 100 30 10 3 1 Ta=75C 0.3 0.1 0.03 0.01 0.1 25C -25C 30 10 3 1 0.3 0.1 0.03 0.01 Ta=-25C 25C 75C Collector current IC (mA) IB=3.0mA 2.5mA 80 2.0mA 1.5mA 60 1.0mA 40 0.5mA 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) hFE -- IC 600 VCE=1V 600 fT -- IE 6 Cob -- VCB Collector output capacitance Cob (pF) VCB=10V Ta=25C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) 500 5 f=1MHz IE=0 Ta=25C 400 400 4 300 300 3 200 Ta=75C 25C -25C 200 2 100 100 1 0 0.1 0.3 1 3 10 30 100 0 -1 -3 -10 -30 -100 -300 -1000 0 1 3 10 30 100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 2 |
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